EC6201 ELECTRONIC DEVICES Syllabus | Anna University Regulation 2013 BE/B Tech First Year Second Semester Syllabus. Below is the Anna University 2013 Regulation Syllabus for 2nd Semester for All Department Except Marine Engineering, Textbooks, Reference books, Exam portions, Question Bank, Previous year question papers, Model question papers, Class notes, Important 2 marks, 8 marks, 16 marks topics. It is applicable for all students admitted in the Academic year 2013-2014 onwards for all its Affiliated institutions in Tamil nadu.
To acquaint the students with the construction, theory and operation of the basic
electronic devices such as PN junction diode, Bipolar and Field effect Transistors, Power
control devices, LED, LCD and other Opto-electronic devices
UNIT I SEMICONDUCTOR DIODE 9
PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias
characteristics, Switching Characteristics.
UNIT II BIPOLAR JUNCTION 9
NPN -PNP -Junctions-Early effect-Current equations – Input and Output characteristics of CE, CB
CC-Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter
Transistor.
UNIT III FIELD EFFECT TRANSISTORS 9
JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance-
MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET-
,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET.
8
UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9
Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel
diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES 9
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor,
Opto Coupler, Solar cell, CCD.
TOTAL : 45 PERIODS
TEXT BOOKS
1. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc GrawHill Inc.
2007.
REFERENCES:
1. Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, 1978.
2. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson Prentice
Hall, 10th edition,July 2008.
EC6201 ELECTRONIC DEVICES L T P C 3 0 0 3
OBJECTIVES: To acquaint the students with the construction, theory and operation of the basic
electronic devices such as PN junction diode, Bipolar and Field effect Transistors, Power
control devices, LED, LCD and other Opto-electronic devices
UNIT I SEMICONDUCTOR DIODE 9
PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias
characteristics, Switching Characteristics.
UNIT II BIPOLAR JUNCTION 9
NPN -PNP -Junctions-Early effect-Current equations – Input and Output characteristics of CE, CB
CC-Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter
Transistor.
UNIT III FIELD EFFECT TRANSISTORS 9
JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance-
MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET-
,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET.
8
UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9
Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel
diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES 9
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor,
Opto Coupler, Solar cell, CCD.
TOTAL : 45 PERIODS
TEXT BOOKS
1. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc GrawHill Inc.
2007.
REFERENCES:
1. Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, 1978.
2. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson Prentice
Hall, 10th edition,July 2008.
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