VL9213 SOLID STATE DEVICE MODELING AND SIMULATION SYLLABUS | ANNA UNIVERSITY ME VLSI DESIGN 1ST SEM SYLLABUS REGULATION 2009 2011 2012-2013 BELOW IS THE ANNA UNIVERSITY FIRST SEMESTER M.E VLSI DESIGN DEPARTMENT SYLLABUS, TEXTBOOKS, REFERENCE BOOKS,EXAM PORTIONS,QUESTION BANK,PREVIOUS YEAR QUESTION PAPERS,MODEL QUESTION PAPERS, CLASS NOTES, IMPORTANT 2 MARKS, 8 MARKS, 16 MARKS TOPICS. IT IS APPLICABLE FOR ALL STUDENTS ADMITTED IN THE YEAR 2011 2012-2013 (ANNA UNIVERSITY CHENNAI,TRICHY,MADURAI, TIRUNELVELI,COIMBATORE), 2009 REGULATION OF ANNA UNIVERSITY CHENNAI AND STUDENTS ADMITTED IN ANNA UNIVERSITY CHENNAI DURING 2009
VL9213 SOLID STATE DEVICE MODELING AND SIMULATION LT P C
3 0 0 3
UNIT I MOSFET DEVICE PHYSICS 9
MOSFET capacitor, Basic operation, Basic modeling,Advanced MOSFET modeling, RF
modeling of MOS transistors, Equivalent circuit representation of MOS transistor, High
frequency behavior of MOS transistor and A.C small signal modeling, model parameter
extraction, modeling parasitic BJT, Resistors, Capacitors, Inductors.
UNIT II NOISE MODELING 9
Noise sources in MOSFET, Flicker noise modeling, Thermal noise modeling, model for
accurate distortion analysis, nonlinearities in CMOS devices and modeling, calculation of
distortion in analog CMOS circuit
UNIT III BSIM4 MOSFET MODELING 9
Gate dielectric model, Enhanced model for effective DC and AC channel length and
width, Threshold voltage model, Channel charge model, mobility model, Source/drain
resistance model, I-V model, gate tunneling current model, substrate current models,
Capacitance models, High speed model, RF model, noise model, junction diode
models, Layout-dependent parasitics model.
6
UNIT IV OTHER MOSFET MODELS 9
The EKV model, model features, long channel drain current model, modeling second
order effects of the drain current, modeling of charge storage effects, Non-quasi-static
modeling, noise model temperature effects, MOS model 9, MOSAI model)
UNIT V MODELLING OF PROCESS VARIATION AND QUALITY 9
ASSURANCE
Influence of process variation, modeling of device mismatch for Analog/RF
Applications, Benchmark circuits for quality assurance, Automation of the tests
TOTAL: 45 PERIODS
REFERENCES
1. Trond Ytterdal, Yuhua Cheng and Tor A. FjeldlyWayne Wolf, “Device Modeling
for Analog and RF CMOS Circuit Design”, John Wiley & Sons Ltd.
VL9213 SOLID STATE DEVICE MODELING AND SIMULATION LT P C
3 0 0 3
UNIT I MOSFET DEVICE PHYSICS 9
MOSFET capacitor, Basic operation, Basic modeling,Advanced MOSFET modeling, RF
modeling of MOS transistors, Equivalent circuit representation of MOS transistor, High
frequency behavior of MOS transistor and A.C small signal modeling, model parameter
extraction, modeling parasitic BJT, Resistors, Capacitors, Inductors.
UNIT II NOISE MODELING 9
Noise sources in MOSFET, Flicker noise modeling, Thermal noise modeling, model for
accurate distortion analysis, nonlinearities in CMOS devices and modeling, calculation of
distortion in analog CMOS circuit
UNIT III BSIM4 MOSFET MODELING 9
Gate dielectric model, Enhanced model for effective DC and AC channel length and
width, Threshold voltage model, Channel charge model, mobility model, Source/drain
resistance model, I-V model, gate tunneling current model, substrate current models,
Capacitance models, High speed model, RF model, noise model, junction diode
models, Layout-dependent parasitics model.
6
UNIT IV OTHER MOSFET MODELS 9
The EKV model, model features, long channel drain current model, modeling second
order effects of the drain current, modeling of charge storage effects, Non-quasi-static
modeling, noise model temperature effects, MOS model 9, MOSAI model)
UNIT V MODELLING OF PROCESS VARIATION AND QUALITY 9
ASSURANCE
Influence of process variation, modeling of device mismatch for Analog/RF
Applications, Benchmark circuits for quality assurance, Automation of the tests
TOTAL: 45 PERIODS
REFERENCES
1. Trond Ytterdal, Yuhua Cheng and Tor A. FjeldlyWayne Wolf, “Device Modeling
for Analog and RF CMOS Circuit Design”, John Wiley & Sons Ltd.
No comments:
Post a Comment
Any doubt ??? Just throw it Here...