EC2038 NANO ELECTRONICS SYLLABUS | ANNA UNIVERSITY BE ECE 7TH SEMESTER SYLLABUS REGULATION 2008 2011-2012 BELOW IS THE ANNA UNIVERSITY SEVENTH SEMESTER BE ELECTRONICS AND COMMUNICATION ENGINEERING DEPARTMENT SYLLABUS IT IS APPLICABLE FOR ALL STUDENTS ADMITTED IN THE YEAR 2011-2012 (ANNA UNIVERSITY CHENNAI,TRICHY,MADURAI,TIRUNELVELI,COIMBATORE), 2008 REGULATION OF ANNA UNIVERSITY CHENNAI AND STUDENTS ADMITTED IN ANNA UNIVERSITY CHENNAI DURING 2009
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UNIT I INTRODUCTION TO NANOTECHNOLOGY 9
Background to nanotechnology: Types of nanotechnology and nanomachines – periodic
table – atomic structure – molecules and phases – energy – molecular and atomic size –
surface and dimensional space – top down and bottom up; Molecular Nanotechnology:
Electron microscope – scanning electron microscope – atomic force microscope –
scanning tunnelling microscope – nanomanipulator – nanotweezers – atom manipulation
– nanodots – self assembly – dip pen nanolithography. Nanomaterials: preparation –
plasma arcing – chemical vapor deposition – sol-gels – electrodeposition – ball milling –
applications of nanomaterials;
UNIT II FUNDAMENTALS OF NANOELECTRONICS 9
Fundamentals of logic devices:- Requirements – dynamic properties – threshold gates;
physical limits to computations; concepts of logic devices:- classifications – two terminal
devices – field effect devices – coulomb blockade devices – spintronics – quantum
cellular automata – quantum computing – DNA computer; performance of information
processing systems;- basic binary operations, measure of performance processing
capability of biological neurons – performance estimation for the human brain. Ultimate
computation:- power dissipation limit – dissipation in reversible computation – the
ultimate computer.
UNIT III SILICON MOSFETs & QUANTUM TRANSPORT DEVICES 9
Silicon MOSFETS - Novel materials and alternate concepts:- fundamentals of MOSFET
Devices- scaling rules – silicon-dioxide based gate dielectrics – metal gates – junctions
& contacts – advanced MOSFET concepts.
Quantum transport devices based on resonant tunneling:- Electron tunneling – resonant
tunneling diodes – resonant tunneling devices; Single electron devices for logic
applications:- Single electron devices – applications of single electron devices to logic
circuits.
UNIT IV CARBON NANOTUBES 9
Carbon Nanotube: Fullerenes - types of nanotubes – formation of nanotubes –
assemblies – purification of carbon nanotubes – electronic propertics – synthesis of
carbon nanotubes – carbon nanotube interconnects – carbon nanotube FETs –
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Nanotube for memory applications – prospects of an all carbon nanotube
nanoelectronics.
UNIT V MOLECULAR ELECTRONICS 9
Electrodes & contacts – functions – molecular electronic devices – first test systems –
simulation and circuit design – fabrication; Future applications: MEMS – robots – random
access memory – mass storage devices.
TOTAL: 45 PERIODS
TEXTBOOKS
1. Michael Wilson, Kamali Kannangara, Geoff Smith, Michelle Simmons and Burkhard
Raguse, Nanotechnology: Basic Science and Emerging Technologies, Chapman &
Hall / CRC, 2002
2. T. Pradeep, NANO: The Essentials – Understanding Nanoscience and
Nanotechnology, TMH, 2007
3. Rainer Waser (Ed.), Nanoelectronics and Information Technology: Advanced
Electronic Materials and Novel Devices, Wiley-VCH, 2003
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